NTE350 by NTE Electronics Inc. | Sourcengine

NTE Electronics Inc. NTE350

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
O-MRFM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
31
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
2.5
Collector-emitter Voltage-Max (V)
18
Power Dissipation Ambient-Max (W)
31
Collector-base Capacitance-Max (pF)
85
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED