NTE338F
NTE Electronics Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRFM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandHIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)10
- Power Dissipation-Max (W)80
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)4
- Collector-emitter Voltage-Max (V)20
- Power Dissipation Ambient-Max (W)80
- Collector-base Capacitance-Max (pF)200
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NTE338F