NT6TL256T32AS-G1
Nanya Technology Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionLPDDR2 DRAM, 256MX32, 5.5ns, CMOS, PBGA216
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width12 mm
- Length12 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeS-PBGA-B216
- Memory Width32
- Organization256MX32
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density8589934592 bit
- Memory IC TypeLPDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.4 mm
- Access Time-Max5.5 ns
- Number of Ports1
- Number of Words268435456 words
- Seated Height-Max0.69 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; ALSO REQURIES 1.2V
- Number of Functions1
- Number of Terminals216
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8,16
- Interleaved Burst Length4,8,16
- Package Equivalence CodeBGA216,29X29,16
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)400 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT6TL256T32AS-G1