NT6CL512F64AH-H1 by Nanya Technology Corporation | Sourcengine

Nanya Technology Corporation NT6CL512F64AH-H1

Lifecycle status
Active
RoHS
RoHS compliant
Description
DDR3L DRAM, 512MX64, CMOS, PBGA216
Category
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
12
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12
JESD-30 Code
S-PBGA-B216
Memory Width
64
Package Code
VFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
216
Terminal Pitch (mm)
0.4
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.83
Supply Voltage-Max (V)
1.3
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
536870912
Sequential Burst Length
8
Package Equivalence Code
BGA216,29X29,16
Clock Frequency-Max (MHz)
933
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-30