NT5CC512M4DN-DI
Nanya Technology Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionDDR3L DRAM, 512MX4, 0.225ns, CMOS, PBGA78
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B78
- Memory Width4
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3L DRAM
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Memory Organization512MX4
- Number of Terminals78
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)0.225
- Number of Words Code512M
- Memory Density (bits)2147483648
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)1.35
- Number of Words (words)536870912
- Sequential Burst Length4,8
- Standby Current-Max (A)0.012
- Supply Current-Max (mA)220
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA78,9X13,32
- Clock Frequency-Max (MHz)800
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
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NT5CC512M4DN-DI