NT5CB512M8EQ-DIH by Nanya Technology Corporation | Sourcengine

Nanya Technology Corporation NT5CB512M8EQ-DIH

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
DDR DRAM, 512MX8, CMOS, PBGA78
Category
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
8
Access Mode
MULTI BANK PAGE BURST
Length (mm)
10.5
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
512MX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
536870912
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED