NT5CB256M4CN-AD
Nanya Technology Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR3 DRAM, 256MX4, 20ns, CMOS, PBGA78
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)8
- Access ModeMULTI BANK PAGE BURST
- Length (mm)10.5
- JESD-30 CodeR-PBGA-B78
- Memory Width4
- Package CodeLFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization256MX4
- Number of Functions1
- Number of Terminals78
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)20
- Number of Words Code256M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.39
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)268435456
- Sequential Burst Length4,8
- Supply Current-Max (mA)230
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA78,9X13,32
- Clock Frequency-Max (MHz)533
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT5CB256M4CN-AD