NSG41275A
NEW ENGLAND SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-258AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-P3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-258AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- VCEsat-Max (V)3.2
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Fall Time-Max (ns)1200
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)75
- Collector-emitter Voltage-Max (V)1200
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NSG41275A
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NSG41275A