NSG40660A
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-258AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-P3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-258AA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Fall Time-Max (tf)125 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)60 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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NSG40660A