NSF20814
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 6.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-254AA
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)6.5 A
- DS Breakdown Voltage-Min800 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.4 ohm
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NSF20814
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NSF20814