NPT25015DR
NITRONEX CORP
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)100
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NPT25015DR