NP89N06PDK-E1-AY by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NP89N06PDK-E1-AY

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Nch Power MOSFET 60V 90A 5.3mohm TO-263 / D2PAK for Automotive
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
147
Drain Current-Max (ID) (A)
90
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
80
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
200
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
140
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1.8
Pulsed Drain Current-Max (IDM) (A)
360
Drain-source On Resistance-Max (ohm)
0.0053
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9.15
Length
10