NP86N04MHE
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)86 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min40 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)450 mJ
- Drain-source On Resistance-Max0.0044 ohm
- Pulsed Drain Current-Max (IDM)344 A
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NP86N04MHE