ProductsManufacturers
Events
Send an RFQBOM Tool

NP84N055KHE-E1-AY

Renesas Electronics Corp.

Renesas Electronics Corp. NP84N055KHE-E1-AY
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-263AB
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    2
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    84 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    55 V
  • Operating Temperature-Max
    175 Cel
  • Power Dissipation-Max (Abs)
    200 W
  • Transistor Element Material
    SILICON
  • Avalanche Energy Rating (Eas)
    441 mJ
  • Drain-source On Resistance-Max
    0.0073 ohm
  • Pulsed Drain Current-Max (IDM)
    336 A
  • Width
    9.15
  • Length
    10

0 suppliers available to buy or to bid for NP84N055KHE-E1-AY

Send an RFQ

Your RFQ will be directly sent to our expert: Pari

Send an RFQ
NP84N055KHE-E1-AY
Send an RFQ
NP84N055KHE-E1-AY