NP82N04PUG
Renesas Electronics Corp.
- Lifecycle statusNRFND
- DescriptionPower Field-Effect Transistor, 82A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)82 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min40 V
- Operating Temperature-Max175 Cel
- Power Dissipation-Max (Abs)288 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.0035 ohm
- Pulsed Drain Current-Max (IDM)328 A
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NP82N04PUG