NP80N055KLE-AZ
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)80 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min55 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)100 mJ
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.015 ohm
- Pulsed Drain Current-Max (IDM)200 A
- Time@Peak Reflow Temperature-Max (s)10
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NP80N055KLE-AZ