NP60N04VLK-E1-AY by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NP60N04VLK-E1-AY

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Nch Power MOSFET 40V 60A 3.9mohm TO-252 / DPAK for Automotive
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
105
Drain Current-Max (ID) (A)
60
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
46
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
260
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
113
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1.2
Pulsed Drain Current-Max (IDM) (A)
240
Drain-source On Resistance-Max (ohm)
0.0039
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
6.1
Length
6.5