NP55N055SDG-AZ by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NP55N055SDG-AZ

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 55A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
288
Drain Current-Max (ID) (A)
55
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Pulsed Drain Current-Max (IDM) (A)
220
Drain-source On Resistance-Max (ohm)
0.01
Time@Peak Reflow Temperature-Max (s)
10