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NP110N055PUJ-E2B-AY

Renesas Electronics Corp.

NP110N055PUJ-E2B-AY Datasheet
Renesas Electronics Corp. NP110N055PUJ-E2B-AY
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-263AB
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    2
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    110 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    55 V
  • Operating Temperature-Max
    175 Cel
  • Power Dissipation-Max (Abs)
    288 W
  • Transistor Element Material
    SILICON
  • Avalanche Energy Rating (Eas)
    435 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.0024 ohm
  • Pulsed Drain Current-Max (IDM)
    440 A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Width
    9.15
  • Length
    10

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NP110N055PUJ-E2B-AY