NJF6510
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-MBCY-W4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-206AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals4
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)50
- Feedback Cap-Max (Crss) (pF)3
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)0.3
- Screening Level / Reference StandardMIL-19500
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