NFD310
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 22A I(D), 350V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-P6
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements2
- Number of Terminals6
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)125
- Drain Current-Max (ID) (A)22
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)350
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.2
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NFD310
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NFD310