NESM240
NEW ENGLAND SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-254AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)18
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Pulsed Drain Current-Max (IDM) (A)72
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NESM240
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NESM240