NESG3033M14-AFB
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Transistor Element MaterialSILICON GERMANIUM
- Collector Current-Max (IC) (A)0.035
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)4.3
- Collector-base Capacitance-Max (pF)0.25
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NESG3033M14-AFB