NESG250134-T1 by NEC COMPOUND SEMICONDUCTOR DEVICES LTD | Sourcengine

NEC COMPOUND SEMICONDUCTOR DEVICES LTD NESG250134-T1

Lifecycle status
Transferred
Description
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON GERMANIUM
Collector Current-Max (IC) (A)
0.5
Collector-emitter Voltage-Max (V)
9.2
Transition Frequency-Nom (fT) (MHz)
10000