NESG2101M05-T1FB-A by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NESG2101M05-T1FB-A

Lifecycle status
Discontinued
Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e6
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Element Material
SILICON GERMANIUM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
5
Collector-base Capacitance-Max (pF)
0.5
Transition Frequency-Nom (fT) (MHz)
17000
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED