NES1823M-45
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 2-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-PDFM-F4
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min19 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max165 W
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NES1823M-45