NES1823M-240 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NES1823M-240

Lifecycle status
Discontinued
Description
RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
12 V
Operating Temperature-Max
150 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
250 W