NE85635-A by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NE85635-A

Lifecycle status
Discontinued
Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
X-CQMW-F4
Configuration
SINGLE
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
QUAD
Additional Feature
LOW NOISE, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
7000 MHz
Collector-base Capacitance-Max
1 pF