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NE85633-T1B-A

Renesas Electronics Corp.

Renesas Electronics Corp. NE85633-T1B-A
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.21.00.75
  • SB Code
    8541.21.00.80
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE
  • JESD-609 Code
    e6
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Terminal Finish
    TIN BISMUTH
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    3
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Transistor Application
    AMPLIFIER
  • DC Current Gain-Min (hFE)
    50
  • Operating Temperature-Max
    150 Cel
  • Collector Current-Max (IC)
    0.1 A
  • Power Dissipation-Max (Abs)
    0.2 W
  • Transistor Element Material
    SILICON
  • Collector-emitter Voltage-Max
    12 V
  • Power Dissipation Ambient-Max
    0.2 W
  • Transition Frequency-Nom (fT)
    7000 MHz
  • Collector-base Capacitance-Max
    1 pF

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NE85633-T1B-A