NE722S01-A by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NE722S01-A

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
X-PXMW-G4
Configuration
SINGLE
JESD-609 Code
e6
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Terminal Finish
TIN BISMUTH
Terminal Position
UNSPECIFIED
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.04 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
4 V
Transistor Element Material
GALLIUM ARSENIDE