NE69039
Renesas Electronics Corp.
- Lifecycle statusNRFND
- REACHREACH compliant
- DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)5 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)60
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.3 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max6 V
- Power Dissipation Ambient-Max0.2 W
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NE69039
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NE69039