NE68139-T1 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NE68139-T1

Lifecycle status
Discontinued
Description
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
S BAND
DC Current Gain-Min (hFE)
50
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.065
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
10
Power Dissipation Ambient-Max (W)
0.2
Collector-base Capacitance-Max (pF)
0.8
Transition Frequency-Nom (fT) (MHz)
9000