NE651R479A-T1
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ConfigurationSINGLE
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Drain Current-Max (ID) (A)1
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)2.5
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NE651R479A-T1
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NE651R479A-T1