NE6500379A
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PQFP-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Drain Current-Max (ID) (A)5.6
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)15
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NE6500379A