NE57500
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.40
- SB Code8541.29.00.40
- JESD-30 CodeR-XUUC-N2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals2
- Power Gain-Min (Gp)3.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)15
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.25 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max20 V
- Power Dissipation Ambient-Max7.5 W
- Transition Frequency-Nom (fT)2000 MHz
0 suppliers available to buy or to bid for NE57500
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
NE57500
Send an RFQ
NE57500