NE5550779A-T1A-A
Renesas Electronics Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans RF MOSFET N-CH 30V 2.1A 4-Pin Case 79A T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XQMW-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionQUAD
- Additional FeatureHIGH EFFICIENCY
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Dissipation-Max (W)17.8
- Drain Current-Max (ID) (A)2.1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)25
- Operating Temperature-Max (Cel)150
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NE5550779A-T1A-A
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NE5550779A-T1A-A