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NE5550779A-T1-A

Renesas Electronics Corp.

Renesas Electronics Corp. NE5550779A-T1-A
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Configuration
    SINGLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Number of Elements
    1
  • Polarity/Channel Type
    N-CHANNEL
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Power Dissipation-Max (W)
    17.8
  • Drain Current-Max (ID) (A)
    2.1
  • DS Breakdown Voltage-Min (V)
    25
  • Operating Temperature-Max (Cel)
    150

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NE5550779A-T1-A
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NE5550779A-T1-A