NE5550234-AZ
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF MOSFET Transistors Pout 33dBm Gain 23.5dB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationN-Channel
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Dissipation-Max (W)12.5
- Drain Current-Max (ID) (A)0.6
- DS Breakdown Voltage-Min (V)25
- Operating Temperature-Max (Cel)150
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NE5550234-AZ
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NE5550234-AZ