NE5500179A
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XQMW-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.25 A
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min8 V
- Transistor Element MaterialSILICON
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NE5500179A