NE425S01-T1B by NEC COMPOUND SEMICONDUCTOR DEVICES LTD | Sourcengine

NEC COMPOUND SEMICONDUCTOR DEVICES LTD NE425S01-T1B

Lifecycle status
Discontinued
Description
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
X-PXMW-G4
Configuration
SINGLE
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
UNSPECIFIED
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
10.5 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.02 A
Highest Frequency Band
KU BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
3 V
Transistor Element Material
GALLIUM ARSENIDE