NE425S01-T1B
NEC Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-PRDB-G4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Additional FeatureLOW NOISE, HIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Power Gain-Min (Gp) (dB)10.5
- Drain Current-Max (ID) (A)0.02
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)4
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NE425S01-T1B