NE41635-T1
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)30
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.1
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)18
- Power Dissipation Ambient-Max (W)0.29
- Collector-base Capacitance-Max (pF)2
- Transition Frequency-Nom (fT) (MHz)3500
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NE41635-T1