NE3521M04-T2-A
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionIC HJ-FET N-CH GAAS 4SMINI
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-F4
- ConfigurationN-Channel
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)9 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.015 A
- Highest Frequency BandK BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min4 V
- Operating Temperature-Max125 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max0.125 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NE3521M04-T2-A