NE3520S03-T1D-A by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NE3520S03-T1D-A

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
S-PQMW-F4
Configuration
SINGLE
Package Shape
SQUARE
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
Operating Mode
ENHANCEMENT MODE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
11.5 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.015 A
Highest Frequency Band
K BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
4 V
Operating Temperature-Max
125 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.165 W