NE3513M04-T2B-A
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans FET N-CH 4V 60mA GaAs HFET 4-Pin Thin-Type Super Mini-Mold T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-F4
- ConfigurationN-Channel
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHETERO-JUNCTION
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)11.5 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.015 A
- Highest Frequency BandKU BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min4 V
- Operating Temperature-Max125 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max0.125 W
0 suppliers available to buy or to bid for NE3513M04-T2B-A
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
NE3513M04-T2B-A
Send an RFQ
NE3513M04-T2B-A