NE3512S02-T1D-A
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans RF MOSFET N-CH 4V 0.07A 4-Pin Case S-02 T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PQMW-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHETERO-JUNCTION
- J-STD-609 Codee6
- Operating ModeDEPLETION MODE
- Terminal FinishTIN BISMUTH
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Power Gain-Min (Gp) (dB)12.5
- Power Dissipation-Max (W)0.165
- Drain Current-Max (ID) (A)0.015
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)3
- Operating Temperature-Max (Cel)125
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NE3512S02-T1D-A