NE350184C-T1A-A
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- JESD-609 Codee6
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Terminal FinishTIN BISMUTH
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)11 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.015 A
- Highest Frequency BandK BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min3 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max0.165 W
0 suppliers available to buy or to bid for NE350184C-T1A-A
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
NE350184C-T1A-A