NE33200
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUUC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)9.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.08 A
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min4 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialSILICON
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NE33200
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NE33200