NE325S01-T1B
NEC Corporation
- Lifecycle statusTransferred
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRDB-G4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Power Gain-Min (Gp) (dB)11
- Drain Current-Max (ID) (A)0.02
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)3
0 suppliers available to buy or to bid for NE325S01-T1B
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
NE325S01-T1B
Send an RFQ
NE325S01-T1B