NE325S01-T1
CALIFORNIA EASTERN LABORATORIES
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PRDB-G4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionRADIAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)11 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.02 A
- Highest Frequency BandKU BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min3 V
- Transistor Element MaterialSILICON
0 suppliers available to buy or to bid for NE325S01-T1
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
NE325S01-T1
Send an RFQ
NE325S01-T1